IXFP3N120 IXYS | Discrete Semiconductor Products - DigiKey
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IXFP3N120 ; Input Capacitance (Ciss) (Max) @ Vds. 1050 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 200W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
In stock
IXYS Standard N-Channel HiPerFET™ Power MOSFETs are designed for both hard switching and resonant mode applications. These devices offer low gate charge and ...
IXFP3N120. Part Datasheet. The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode ...
Dim. Millimeter. Inches. Min. Max. Min. Max. A. 4.06. 4.83 .160 .190. A1. 2.03. 2.79 .080 .110 b. 0.51. 0.99 .020 .039 b2. 1.14. 1.40 .045 .055.
IXFP3N120 ; Forward Transconductance - Min, 1.5 S ; Height, 16 mm ; Length, 10.66 mm ; Product Type, MOSFET ; Rise Time, 15 ns.
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IXFP3N120 IXYS N-Channel Mosfet 1200V 3A 200W 4.5R TO220 #BP ; DARISUS GmbH (65670) ; Approx. $12.27. + $8.54 shipping ; Shipping and Returns · International ...
IXFP3N120 ; Reselling discounts up to 40%! ; Specifications. Drain-Source Voltage (V): 1200. Maximum On-Resistance @ 25 ℃ (Ohm): 4.500. Continuous Drain Current @ ...
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Buy original and new IXFP3N120 from IXYS at Lisleapex Electronic. This product is a MOSFET with a current rating of 3 Amps and a voltage rating of 1200V, ...
Part #: IXFP3N120. Download. File Size: 565Kbytes. Page: 4 Pages. Description: HiPerFET Power MOSFETs. Manufacturer: IXYS Corporation.
