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IXFN55N50 IXYS Discrete Semiconductor Modules 55 Amps 500V 0.08 Rds datasheet, inventory, & pricing.
IXFN55N50 IXYS | Discrete Semiconductor Products - DigiKey
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IXFN55N50 ; Input Capacitance (Ciss) (Max) @ Vds. 9400 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 625W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate ...
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IXFN55N50 ; Product Type, Discrete Semiconductor Modules ; Rds On - Drain-Source Resistance, 90 mOhms ; Rise Time, 60 ns ; Tradename, HyperFET ; Transistor Polarity ...
$10.28
1PCS IXFN55N50 MODULE,HiPerRF Power MOSFETs ; Quantity. 4 sold. More than 10 available ; Item Number. 372145503205 ; Brand. Chips Gate ; MPN. Does not apply ...
HiPerFET™ Power MOSFET Single Die MOSFET Features • International standard packages • Encapsulating epoxy meets. UL 94 V-0, flammability classification
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IXFN55N50 IXYS N Channel Power Mosfet Transistor 500V 55A · Radio 741 RF & Microwaves (18082) · 99.7% positive feedback ...
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✨ Outstanding performance: the igbt power module is made of high-quality materials, which is durable and has a long service life. ✨ Maximum power: this igbt ...
€44.95
Power MOSFET Single The MOSFET features - International standard packages - Encapsulating epoxy meets UL 94 V-0, flammability classification
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US Stock Same Day Shipping till 5pm Buy Ixfn55n50 by IXYS Here. Inspected - Tested - 1...