Specifications ; Vds - Drain-Source Breakdown Voltage: 600 V ; Id - Continuous Drain Current: 64 A ; Rds On - Drain-Source Resistance: 96 mOhms ; Vgs - Gate-Source ...

Order today, ships today. IXFK64N60P – N-Channel 600 V 64A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK) from IXYS. Pricing and Availability on millions of ...

Find information for part IXFK64N60P from the Polar™ Series N Channel HiPerFETs, or search for Power Semiconductors and more Discrete MOSFETs from ...

IXFK64N60P ; Length, 19.96 mm ; Product Type, MOSFET ; Rise Time, 23 ns ; Series, IXFK64N60 ; Transistor Type, 1 N-Channel.

25 pcs LOT, BRAND NEW IXYS IXFK64N60P N-Channel 600 V 0.096 Ohm Through Hole. Condition is New. Shipped with Expedited Shipping from outside US.

IXFK64N60PIXYS ; Drain current. 64A ; Power dissipation. 1.04kW ; Case. TO264 ; On-state resistance. 96mΩ ; Mounting. THT.

Pricing and availability from all the top distributors and hundreds more. View IXFK64N60P Ixys datasheet, CAD models, lifecycle, RoHS, alternates and ...

Part #: IXFK64N60P. Download. File Size: 175Kbytes. Page: 2 Pages. Description: N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode.

N-Channel 600 V 0.096 Ohm Through Hole HiPerFET Power Mosfet -TO-264. Datasheet. Product Details. Find similar products. Compliance. Select to search

IXFK64N60P ; Lead free / RoHS Compliant · 5V @ 8mA · ±30V · MOSFET (Metal Oxide) · TO-264AA (IXFK).