Find information for part IXFH12N90P from the Polar™ Series N Channel HiPerFETs, or search for Power Semiconductors and more Discrete MOSFETs from ...
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IXFH12N90P ; Input Capacitance (Ciss) (Max) @ Vds. 3080 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 380W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
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The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for ...
Polar™ HiPerFET™ Power MOSFET. N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode. Features • International Standard Packages • Avalanche Rated
€5.72
The IXFH12N90P is a HiPerFET™ N-channel enhancement-mode Polar™ Power MOSFET features avalanche rated and fast intrinsic diode. Low package ...
IXFH12N90P - are manufactured by Littelfuse/IXYS. HQonline offers the price, inventory, datasheet of IXFH12N90P. Authentic guaranteed & available to ship ...
IXFH12N90P MOSFET. Datasheet pdf. Equivalent. Type Designator: IXFH12N90P Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
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IXFH12N90P TO-247 MOSFET N-CH 900V 12A TO-247 ; FET Feature, Standard ; Drain to Source Voltage (Vdss), 900V ; Current - Continuous Drain (Id) @ 25 C · 12A ; Rds On ...
$20.44
This item can be returned in its original condition for a full refund or replacement within 30 days of receipt. You may receive a partial or no refund on used, ...
Manufacturer, Part #, Datasheet, Description. logo. IXYS Corporation, IXFH12N90P · IXYS-IXFH12N90P Datasheet 184Kb / 4P, Polar Power MOSFET HiPerFET.