IXFH12N100Q IXYS MOSFET 12 Amps 1000V 1.05 Ohms Rds datasheet, inventory, & pricing.
$6.02
IXFH12N100Q ; Input Capacitance (Ciss) (Max) @ Vds. 2900 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 300W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and ...
$17.00
5pcs IXYS IXFH12N100Q TO-247 TRANSISTOR | MOSFET | N-CHANNEL | RH ; Condition. Seller refurbished ; Item Number. 203353239961 ; Accurate description. 4.9.
Features ○ IXYS advanced low Qg process ○ Low gate charge and capacitances - easier to drive - faster switching ○ International standard packages
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(804) · $37,375.00
The IXYS 1049362-IXFH12N100Q is an N-channel MOSFET with a drain-source breakdown voltage of 1000V and a continuous drain current of 12A (Tc). It has a maximum ...
IAR. TC. = 25°C. 12N100Q. 12. A. 10N100Q. 10. A. EAR. TC. = 25°C. 30. mJ dv/dt. IS. ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,. 5. V/ns. TJ ≤ 150°C, RG = 2 Ω.
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IXFH12N100Q is a 1200V, 10A, N-Channel, Field Stop IGBT from IXYS. It is designed for high frequency switching applications. It features low gate charge, ...
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(10)
Buy IXFH12N100Q from IXYS at Avaq. Quality Components, Delivered Fast. Download free datasheet PDF, Pinout, voltage, details, and Circuit diagram.
