IRLR8103VPBF ; Input Capacitance (Ciss) (Max) @ Vds. 2672 pF @ 16 V ; FET Feature. - ; Power Dissipation (Max). 115W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
IRLR8103VPbF www.irf.com. 1. S. D. G. PD - 95093A. IRLR8103V. RDS(on). 7.9 mΩ. QG. 27 nC. QSW. 12 nC. QOSS. 29nC. Absolute Maximum Ratings. Symbol. Units. VDS.
Specifications ; Transistor Polarity: N-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 30 V ; Id - Continuous Drain Current: 89 A.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper ...
IRLR8103VPBF Infineon Technologies MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC 데이터시트, 재고, 가격.
Infineon (IRF) IRLR8103VPBF | Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK - This product is available in Transfer Multisort Elektronik.
IRLR8103VPBF Datasheet (PDF) ; Page, 8 Pages ; Producent, IRF [International Rectifier] ; Strona internetowa, http://www.irf.com.
Part #, IRLR8103VPBF. Download, IRLR8103VPBF Click to download. File Size, 205.8 Kbytes. Page, 8 Pages. Manufacturer, IRF [International Rectifier].
Infineon (IRF) IRLR8103VPBF | Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK - Producto disponible en Transfer Multisort Elektronik.
$0.96
Nov 28, 2023 · IRLR8103VPBF Infineon datasheet PDF, 9 pages, view IRLR8103VPBF User Reference Manual Guide & Application Note online, DPAK N-CH 30V 91A.