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May 12, 2010 · Description. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
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IRF2804 ; Vgs(th) (Max) @ Id. 4V @ 250µA ; Gate Charge (Qg) (Max) @ Vgs. 240 nC @ 10 V ; Vgs (Max). ±20V ; Input Capacitance (Ciss) (Max) @ Vds. 6450 pF @ 25 V.
IR MOSFET™ N-channel Power MOSFET ; TO-220 package; 2.3 mOhm;
IRF2804 MOSFET. Datasheet pdf. Equivalent. Type Designator: IRF2804 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
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Product Name : MOSFET;Model No. : IRF2804; Drain Source Voltage : 40V;Drain Current : 25A; Mounting Hole Diameter : 3.5mm/0.14";Pin Size : 14 x 2.5mm/0.55" ...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance ...
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2Pcs Power Mosfet IRF2804 Irf 2804 Transistor TO-220 qg ; Quantity. 20 available ; Item Number. 305126022351 ; Brand. Unbranded ; MPN. Does not apply ; Accurate ...
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Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per ...
How to do thermo simulation for mosfet(IRF2804)? - PCB Design
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Apr 2, 2010 · Hi, I keep getting these error messages with my netlist when i try to simulate in a simple double pulse test circuit. Netlist: *SICPOWER1200 .