IPI034NE7N3 G Infineon Technologies MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 datasheet, inventory, & pricing.

Nov 11, 2009 · Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 μm thick) copper area for drain connection.

IPI034NE7N3 G ; Input Capacitance (Ciss) (Max) @ Vds. 8130 pF @ 37.5 V ; FET Feature. - ; Power Dissipation (Max). 214W (Tc) ; Operating Temperature. -55°C ~ 175°C ...

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IPI034NE7N3 G Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 75V ; Current ...

Global distributor of Infineon Technologies + IPI034NE7N3 G + IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3, Stock: Yes, shipping: Can Ship ...

IPI034NE7N3 G. OptiMOSTM3 Power-Transistor. Features. • Optimized ... IPI034NE7N3 G. Package. PG-TO220-3. PG-TO262-3. Marking. 034NE7N. 034NE7N.

IPI034NE7N3 G ; Operating Temperature: -55°C ~ 175°C (TJ) ; Moisture Sensitivity Level (MSL):, 1 (Unlimited) ; Input Capacitance (Ciss) (Max) @ Vds: 8130pF @ 37.5V.

Part Number, IPI034NE7N3 G ; Hiersteller, International Rectifier (Infineon Technologies) ; Beschreiwung, MOSFET N-CH 75V 100A TO262-3 ; Bleif Free Status / RoHS ...