OptiMOS™ 5 N-channel Power MOSFET 60 V ; I2PAK TO-262 package; 2 mOhm;
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain. connection. PCB is vertical in still air.
IPI020N06N · Synchronous rectification · Solar micro inverter · Isolated DC-DC converters · Motor control for 12-48V systems · Or-ing switches.
Part #: IPI020N06N. Download. File Size: 1021Kbytes. Page: 2 Pages. Description: New OptiMOS??40V and 60V. Manufacturer: Infineon Technologies AG.
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS ; CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 29A (TA), 120A (TC) ; DRAIN TO SOURCE VOLTAGE (VDSS): 60V ; FET FEATURE: ...
$1.75
Order today, ships today. IPI020N06NAKSA1 – N-Channel 60 V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) Through Hole PG-TO262-3-1 from Infineon Technologies.
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel
FET Type, MOSFET N-Channel, Metal Oxide. Drain to Source Voltage (Vdss), 60V. Current - Continuous Drain (Id) @ 25°C, 29A (Ta), 120A (Tc).
Specifications ; Transistor Type: 1 N-Channel ; Type: OptiMOS 3 Power-Transistor ; Typical Turn-Off Delay Time: 51 ns ; Typical Turn-On Delay Time: 24 ns.
IPI020N06N MOSFET. Datasheet pdf. Equivalent. Type Designator: IPI020N06N Marking Code: 020N06N Type of Transistor: MOSFET Type of Control Channel: ...