IPD640N06L-G · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R · Ideal for fast switching applications · RoHS compliant - halogen free ...
Specifications ; Package / Case: DPAK-3 (TO-252-3) ; Transistor Polarity: N-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 60 V.
View datasheets for IPD640N06L G by Infineon Technologies and other related components here.
€0.63
IPD640N06L G Infineon Technologies MOSFET N-Ch 60V 18A DPAK-2 datasheet, inventory & pricing.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.4.
Buy IPD640N06L G N-CH 60V 18A 64mOhm TO252-3 from INFINEON on Rutronik24. | Get price and stock infos ✓ lead time ✓ datasheets ✓ and parameters ✓.
Order today, ships today. IPD640N06LGBTMA1 – N-Channel 60 V 18A (Tc) 47W (Tc) Surface Mount PG-TO252-3 from Infineon Technologies.
MOSFET, N-CH, 60V, 18A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.047ohm; ...
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IPD640N06L G PG-TO252-3 MOSFET N-CH 60V 18A TO-252 ; Gate Charge (Qg) @ Vgs, 13nC @ 10V ; Input Capacitance (Ciss) @ Vds, 470pF @ 30V ; Power - Max, 47W ; Mounting ...
Part #: IPD640N06L. Download. File Size: 335Kbytes. Page: 2 Pages. Description: N-Channel MOSFET Transistor. Manufacturer: Inchange Semiconductor Company ...