$2.74 In stock

Specifications ; Vds - Drain-Source Breakdown Voltage: 100 V ; Id - Continuous Drain Current: 75 A ; Rds On - Drain-Source Resistance: 14 mOhms ; Vgs - Gate-Source ...

HUF75645S3ST ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 100 V ; Current - Continuous Drain (Id) @ 25°C · 75A (Tc) ; Drive Voltage (Max Rds ...

The HUF75645S3ST is an UltraFET N-channel Power MOSFET with ultra-low ON-resistance. Peak current vs. pulse width curve; UIS rating curve; Simulation models ...

HUF75645S3ST ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 100 V ; Current - Continuous Drain (Id) @ 25°C · 75A (Tc) ; Drive Voltage (Max Rds ...

$2.94 In stock

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HUF75645P3, HUF75645S3ST. UNITS. Drain to Source ... Pulsed Drain Current . ... arising out of the application or use of any ...

Specification ; Technology. UltraFET® ; Polarisation. unipolar ; Drain-source voltage. 100V ; Drain current. 65A ; Power dissipation. 310W.

Technical Specifications ; Drain to Source Resistance, 14 mΩ ; Drain to Source Voltage (Vdss), 100 V ; Element Configuration, Single ; Fall Time, 97 ns ; Gate to ...

Part Number, HUF75645S3ST. Part Status, Active. FET Type, N-Channel. Technology, MOSFET (Metal Oxide). Drain to Source Voltage (Vdss), 100V. Current ...