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HUF75337P3 ; FET Feature. - ; Power Dissipation (Max). 175W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ) ; Mounting Type. Through Hole.
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Specifications ; Package / Case: TO-220-3 ; Transistor Polarity: N-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 55 V.
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This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of ...
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Equivalent. Type Designator: HUF75337P3 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 175 W
This device is capable of with- standing high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was ...
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These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology.
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Details, datasheet, quote on part number: HUF75337P3 ; Description, 75A, 55V, 0.014 Ohm, N-channel UltraFET Power MOSFETs ; Company, Intersil Corporation ; Cross ...
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This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was ...
Series name: UltraFET(TM). Field-effect transistor type: N-CH. Technology System: MOSFET(Metal Oxide). Package: TO-220-3. Drain to Source voltage: 55V.
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Aug 4, 2009 · They should work without any mods. If the new FETs start to heat up at idle and the amp isn't drawing excessive current (drawing less than ~2 ...
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