The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

Order today, ships today. HGTP12N60C3 – IGBT 600 V 24 A 104 W Through Hole TO-220-3 from onsemi. Pricing and Availability on millions of electronic components

The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop ...

International shipment of items may be subject to customs processing and additional charges. Returns. Accepted within 60 days.

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

$7.92 30-day returns In stock

5PCS HGTP12N60C3 P12N60C3 G12N60C3 TO220 ; Sold by. shenzhenfenxindianzikejiyouxiangongsi ; Returns. Eligible for Return, Refund or Replacement within 30 days of ...

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop ...

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· $2.78 · $27.93 delivery

Description: The HGTP12N60C3 is a 600V N-channel IGBT with a maximum current rating of 12A. Features: Low on-resistance Low gate charge Low input ...

10pcs G12N60C3 HGTP12N60C3 TO-220 ; Shipping and Returns · International shipment of items may be subject to customs processing and additional charges. ; Est.