May 24, 2001 · Emitter-Collector. DC. IECF. 15. TOSHIBA. 2-21F2C. A. Foward Current. 1ms IECFP. 120. Weight: 9.75g. Junction Temperature (Tc=25°C).
GT60M301 IGBT. Datasheet pdf. Equivalent. Type Designator: GT60M301 Type: IGBT + Anti-Parallel Diode Type of IGBT Channel: N Maximum Power Dissipation (Pc), ...
GT60M301. SILICON N CHANNEL MOS TYPE. GT60 M301. HIGH POWER SWITCHING APPLICATIONS. The 3rd Generation. FRD Included Between Emitter and Collector. Enhancement ...
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