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FJBE2150D Rev. 1.4. January 2016. FJBE2150D. ESBC. ™. Rated NPN Silicon Transistor. ESBC Features (FDC655 MOSFET). • Low Equivalent On Resistance. • Very Fast ...
Order today, ships today. FJBE2150DTU – Bipolar (BJT) Transistor NPN 800 V 2 A 5MHz 110 W Surface Mount TO-263 (D2PAK) from onsemi.
Power Discrete BJT Electrical Parameters *************** ** Product: FJBE2150D ** ESBC Configuration ...
FJBE2150D. Packaging: Tube. Brand: onsemi / Fairchild. Continuous Collector Current: 500 mA. DC Collector/Base Gain hfe Min: 20. DC Current Gain hFE Max: 35.
FJBE2150D from www.datasheet.hk
Part No. FJBE2150D. Description, ESBCRated NPN Silicon Transistor. File Size, 669.72K / 13 Page. Maker
RCS(ON) 0.261 Ω(1) Low Equivalent On Resistance Very Fast Switch: 150 kHz Squared RBSOA: Up to 1500 V Avalanche Rated Low Driving Capacitance, No Miller ...
FJBE Datasheet. Part #: FJBE2150D. Datasheet: 678Kb/13P. Manufacturer: Fairchild Semiconductor. Description: ESBCTM Rated NPN Silicon Transistor. 1 Results.
2150D Datasheet. Part #: FJBE2150D. Datasheet: 678Kb/13P. Manufacturer: Fairchild Semiconductor. Description: ESBCTM Rated NPN Silicon Transistor.
The Test Coupon in Figure 3 has several problems that limit the maximum operating voltage to less than the 1500 V rating of the attached BJT (FJBE2150D). To ...