FDV303N/D. Digital FET, N-Channel. FDV303N. General ... 303. = Specific Device Code. M. = Date Code. G. = Pb ... FDV303N. Units. VDSS. Drain-Source Voltage, Power ...
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Specifications ; Maximum Operating Temperature: + 150 C ; Pd - Power Dissipation: 350 mW ; Channel Mode: Enhancement ; Series: FDV303N.
FDV303N onsemi | Discrete Semiconductor Products - DigiKey
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FDV303N ; Current - Continuous Drain (Id) @ 25°C · 680mA (Ta) ; Drive Voltage (Max Rds On, Min Rds On). 2.7V, 4.5V ; Rds On (Max) @ Id, Vgs. 450mOhm @ 500mA, 4.5V.
$0.05
It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers.
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Buy FDV303N - Onsemi - Power MOSFET, N Channel, 25 V, 680 mA, 0.33 ohm, SOT-23, Surface Mount. Newark offers fast quotes, same day shipping, fast delivery, ...
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It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers.
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Stock Availability: 0 ; Manufacturer: onsemi ; Mfg #: FDV303N ; Richardson RFPD #: FDV303N ; Description: Power MOSFET Transistor ; Min/Mult: 15,000/1 ...
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Set of 20 pieces TRANSISTOR FDV303N FDV303, 303, MOSFET 25V 680MA SOT-23. Fuse Holders (23). Auto Fuses (60). Thermal & Pico Fuses (30).
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FDV303N - N-Channel Digital FET 25V 0.68A 0.45Ohm SMD SOT-23-3 ; Drain to Source Resistance: 450 mohm ; Drain to Source Voltage (Vdss):. 25 V ; Current Rating: 680 ...
$164.28
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.