FDG6316P/D. MOSFET– Specified,. P-Channel ... FDG6316P. 7”. 8 mm. 3,000 / Tape & Reel. †For information on ... STYLE 16: PIN 1. BASE 1. 2. EMITTER 2. 3. COLLECTOR ...
.16. FDG6316P. 7''. 8mm. 3000 units. FDG6316P. Page 2. FDG6316P Rev D (W). Electrical Characteristics. TA = 25°C unless otherwise noted. Symbol. Parameter. Test ...
FDG6316P ; Gate Charge (Qg) (Max) @ Vgs. 2.4nC @ 4.5V ; Input Capacitance (Ciss) (Max) @ Vds. 146pF @ 6V ; Power - Max. 300mW ; Operating Temperature. -55°C ~ 150°C ...
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This P-channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench® process. It has been optimized for battery power management applications ...
This P-channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
.16. FDG6316P. 7''. 8mm. 3000 units. FDG6316P. January 2011. • RoHS Compliant. ©2011 Fairchild Semiconductor Corporation. FDG6316P Rev.D1 www.fairchildsemi.com.
FDG6316P datasheet - P-channel 1.8V Specified Powertrench MOSFET
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FDG6316P P-channel 1.8V Specified Powertrench MOSFET . This P-Channel 1.8V specified MOSFET uses Fairchilds advanced low voltage PowerTrench process.
Part #: FDG6316P. Download. File Size: 1MbKbytes. Page: 7 Pages. Description: Dual P-Channel 20 V (D-S) MOSFET. Manufacturer: VBsemi Electronics Co.,Ltd.
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In summary, the FDG6316P is a high-performance N-channel MOSFET that offers excellent on-state resistance and fast switching capabilities. Its low gate charge ...
€0.44
The FDG6316P is a dual P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery management and load switch ...