FDC8602 onsemi | Discrete Semiconductor Products - DigiKey
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FDC8602 ; Gate Charge (Qg) (Max) @ Vgs. 2nC @ 10V ; Input Capacitance (Ciss) (Max) @ Vds. 70pF @ 50V ; Power - Max. 690mW ; Operating Temperature. -55°C ~ 150°C (TJ).
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Waiting.
FDC8602/D. MOSFET – Dual,. N-Channel, Shielded Gate,. POWERTRENCH. ) 100 V, 1.2 A, 350 mW. FDC8602. General Description. This N−Channel MOSFET is produced ...
FDC8602 Rev.C1. Typical Characteristics TJ = 25 °C unless otherwise noted ... FDC8602 Rev.C1. TRADEMARKS. The following includes registered and unregistered ...
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Features a 177A continuous drain current, 2.8mΩ at 10V RDS(ON), and 100V drain-to-source voltage.
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Dual MOSFET, N Channel, 100 V, 100 V, 1.2 A, 1.2 A, 0.285 ohm ; Manufacturer Part No. FDC8602 ; Newark Part No.: 57AC1881 ; Continuous Drain Current Id: 1.2A.
$0.47 to $258.36
MOSFET, DUAL N-CH, 100V, 1.2A, SUPERSOT; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1.2A; Drain Source Voltage Vds: 100V; ...
Part #: FDC8602. Download. File Size: 257Kbytes. Page: 7 Pages. Description: Dual N-Channel PowerTrench짰 MOSFET 100 V, 1.2 A, 350 m廓.
Free delivery over $150 60-day returns
Buy FDC8602 - Onsemi - FET 100V 350.0 MOHM SSOT6 / REEL. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, datasheets & technical ...
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ONSEMI FDC8602 | Transistor: N-MOSFET x2; unipolar; 100V; 1.2A; Idm: 5A; 960mW - This product is available in Transfer Multisort Elektronik.