OptiMOS™ P-channel Power MOSFET 30 V ; PQFN 3.3 x 3.3 package; 18 mOhm;
BSZ180P03NS3E G Infineon Technologies MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 datasheet, inventory, & pricing.
BSZ180P03NS3E G · Enhancement mode · Normal level, logic level or super logic level · Avalanche rated · Pb-free lead plating; RoHS compliant.
In stock
BSZ180P03NS3 G Infineon Technologies MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 datasheet, inventory, & pricing.
In stock
BSZ180P03NS3EGATMA1 ; Supplier Device Package. PG-TSDSON-8 ; Package / Case. 8-PowerTDFN ; Base Product Number. BSZ180 ; Link. Datasheets, BSZ180P03NS3E G · Other ...
AMD 1,180.00
BSZ180P03NS3E G, TSDSON-8(3.3x3.3) MOSFETs ROHS, Collector Current (Ic) 51A, Collector-Emitter Breakdown Voltage (Vces) 650V, Diode Reverse Recovery Time ...
Nov 16, 2009 · Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 μm thick) copper area for drain connection.
$0.65
BSZ180P03NS3 G Infineon Technologies US$0.6539 - TSDSON-8(3.3x3.3) MOSFETs ROHS datasheet, price, inventory C534713.
Input Capacitance (Ciss) (Max) @ Vds. 2220 pF @ 15 V ; FET Feature. - ; Power Dissipation (Max). 2.1W (Ta), 40W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
BSZ180P03NS3E G - Blank PCBs are manufactured by Infineon. HQonline offers the price, inventory, datasheet of BSZ180P03NS3E G. Authentic guaranteed ...