Jul 30, 2019 · BSO613SPV G. PG-SO 8. Yes. Maximum Ratings,at Tj = 25 °C, unless otherwise specified. Parameter. Symbol. Value. Unit. Continuous drain current.
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BSO613SPV ; Input Capacitance (Ciss) (Max) @ Vds. 875 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 2.5W (Ta) ; Operating Temperature. -55°C ~ 150°C (TJ).
Specifications ; Package / Case: SOIC-8 ; Transistor Polarity: P-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 60 V.
Small Signal N/P dual Power MOSFET -60 V,60 V ; SO-8 package; 120 mOhm;
Specifications ; Typical Turn-Off Delay Time: 32 ns ; Typical Turn-On Delay Time: 10 ns ; Width: 3.9 mm ; Part # Aliases: BSO613SPV G SP000216309 BSO613SPVGXT.
Part #: BSO613SPV. Download. File Size: 90Kbytes. Page: 9 Pages. Description: SIPMOS Small-Signal-Transistor. Manufacturer: Infineon Technologies AG.
Rating
Specifications ; Current - Continuous Drain (Id) @ 25°C, 3.44A (Ta) ; Drive Voltage (Max Rds On, Min Rds On), 10V ; Rds On (Max) @ Id, Vgs, 130mOhm @ 3.44A, 10V.
BSO613SPVGHUMA1 ; Package / Case. 8-SOIC (0.154", 3.90mm Width) ; Link. Datasheets, BSO613SPV G · Other Related Documents, Part Number Guide. Featured Product ...
May 31, 2011 · BSO613SPV G. PG-SO 8. Yes. Maximum Ratings,at Tj = 25 °C, unless otherwise specified. Parameter. Symbol. Value. Unit. Continuous drain ...
Part Number, BSO613SPV G. Rad Hard, No. Typical Fall Time, 12 ns. Channel Mode, Enhancement. Maximum Drain Source Voltage, 60 V. Maximum Gate Source Voltage ...