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Combines a 600A or 800A common emitter & a fast trench IGBT module with an emitter-controlled diode. Learn More.
$25.29 2-day delivery 60-day returns
Specifications ; 6.5 V · 3.2 V · 107.5 mm · 45 mm · 0.41 lbs.
$159.27
Infineon BSM35GD120DN2E3224. IGBT POWER MODULE Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel. $ 159.27.
NEW 1PCS BSM35GD120DN2E3224 BSM35GD120DN2_E3224 Package:MODULE ; Item Number. 254349648885 ; Package: MODULE ; Accurate description. 4.6 ; Reasonable shipping cost.
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Model: BSM35GD120DN2E3224; Type: Programmable Logic Control Product; Condition and Warranty: 100% NEW sealed in box. One-Year Warranty. Customer-oriented.
$101.30 30-day returns
IGBT Module Equivalent to circuit switch，Has stabilized control voltage，Strong voltage resistance and other hot spots; A channel is formed by adding a ...
Item Number: BSM35GD120DN2E3224 Brand: Infineon Item Category: Transistors Subcategory: IGBTs Type: Six-Pack Vces: 1200 Volts Ic: 35 Amps shipping by: ...
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Jan 31, 2006 · BSM35GD120DN2E3224. 1200V 50A. ECONOPACK 2K. C67070-A2506-A67. Maximum Ratings. Parameter. Symbol. Values. Unit. Collector-emitter voltage. VCE.
Page 1. Semiconductor Group. 1. Jan-09-1997. BSM35GD120DN2E3224. Circuit Diagram. Package Outlines. Dimensions in mm. Weight: 180 g.