BSC057N08NS3 G. Table 7 Reverse diode. Infineon. Values. Parameter. Symbol. Unit Note / Test Condition. Min. Typ. Max. Diode continuous forward current. Is. 103.
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BSC057N08NS3 G Infineon Technologies MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 datasheet, inventory, & pricing.
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which ...
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BSC057N08NS3GATMA1 ; Package / Case. 8-PowerTDFN ; Base Product Number. BSC057 ; Link. Datasheets, BSC057N08NS3 G · Other Related Documents, Part Number Guide.
Oct 22, 2009 · Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection.
Width: 6.1 mm. Rds On - Drain-Source Resistance: 5.7 mOhms. Minimum Operating Temperature: - 55 C. Technology: Si. Package / Case: TDSON-8. Height: 1.1 mm.
BSC057N08NS3 Datasheet. Part #: BSC057N08NS3G. Datasheet: 328Kb/9P. Manufacturer: Infineon Technologies AG. Description: OptiMOS3 Power-Transistor.
Buy BSC057N08NS3 G N-CH 80V 100A 5.7mOhm TDSON-8 from INFINEON on Rutronik24. | Get price and stock infos ✓ lead time ✓ datasheets ✓ and parameters ✓.
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM)