BSC047N08NS3 G. Table 7 Reverse diode. Infineon. Values. Parameter. Symbol. Unit Note / Test Condition. Min. Typ. Max. Diode continuous forward current. Is. 107.
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BSC047N08NS3 G Infineon Technologies MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 datasheet, inventory, & pricing.
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Order today, ships today. BSC047N08NS3GATMA1 – N-Channel 80 V 18A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1 from Infineon Technologies ...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which ...
BSC047N08NS3GATMA1 Infineon Technologies - Mouser Electronics
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Specifications ; Typical Turn-Off Delay Time: 44 ns ; Typical Turn-On Delay Time: 18 ns ; Width: 5.15 mm ; Part # Aliases: BSC047N08NS3 G SP000436372.
Buy BSC047N08NS3 G N-CH 80V 100A 4.7mOhm TDSON-8 from INFINEON on Rutronik24. | Get price and stock infos ✓ lead time ✓ datasheets ✓ and parameters ✓.
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The BSC047N08NS3 G is a 80V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. The OptiMOS™ MOSFET ...
BSC047N08NS3 G - are manufactured by Infineon. HQonline offers the price, inventory, datasheet of BSC047N08NS3 G. Authentic guaranteed & available to ship ...
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FET Type, N-Channel, Technology, MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss), 80 V · Current - Continuous Drain (Id) @ 25°C, 18A (Ta), 100A (Tc).