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0.1. 1.0. VDS=60 V, VGs=0 V, T¡=25 °C. Zero gate voltage drain current. Ipss. ΜΑ. 10. 100. VDS-60 V, VGS=0 V, T=125 °C. Gate-source leakage current.
BSC031N06NS3 G Infineon Technologies MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 datasheet, inventory, & pricing.
Equivalent. Type Designator: BSC031N06NS3G Marking Code: 031N06NS Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation ...
Nov 23, 2023 · Trans MOSFET N-CH 60V 100A 8Pin TDSON T/R. BSC031N06NS3G Datasheet PDF. Infineon. Optimostm3 Power Transistor Power Mosfet.