Oct 16, 2014 · MOSFET. OptiMOSTM Power-Transistor, 60 V. Features. • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested.
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BSC014N06NS Infineon Technologies MOSFET N-Ch 60V 100A TDSON-8 OptiMOS datasheet, inventory, & pricing.
OptiMOS™ 5 N-channel Power MOSFET 60 V ; SuperSO8 5x6 package; 1.45 mOhm;
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Order today, ships today. BSC014N06NSATMA1 – N-Channel 60 V 30A (Ta), 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-17 from Infineon Technologies.
View BSC014N06NS by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.
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BSC014N06NS Infineon Technologies $1.843 - 60V 30A 1.45mΩ@10V,50A 2.5W 2.8V@120uA 1PCSNChannel TDSON-8-FL MOSFETs ROHS datasheet, price, inventory C113391.
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BSC014N06NS Infineon Technologies MOSFET N-Ch 60V 100A TDSON-8 OptiMOS datasheet, inventory & pricing.
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BSC014N06NS ; Package: TDSON-8-FL ; Description: 60V 30A 1.45mΩ@10V,50A 2.5W N Channel TDSON-8-FL MOSFETs ROHS ; Datasheet: Download ; Source: JLCPCB ; Assembly Type ...
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BSC014N06NS ; Id - Continuous Drain Current: 100 A ; Rds On - Drain-Source Resistance: 1.45 mOhms ; Vgs - Gate-Source Voltage: - 20 V, + 20 V ; Vgs th - Gate-Source ...
Summary of Features. Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices ; Benefits.