The BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.
Sep 26, 2018 · The BFR840L3RHESD is a discrete RF heterojunction bipolar transistor (HBT) with an ... BFR840L3RHESD / BFR840L3RHESDE6327XTSA1 TSLP-3-9 1 = B 2 = ...
BFR840L3RHESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC ...
$17.55
BFR840L3RHESD. Frequency: 5 GHz. Brand: Infineon Technologies. Operating Supply Voltage: 1.2 V, 1.8 V. Product Type: RF Development Tools. Factory Pack Quantity ...
BFR840L3RHESD Datasheet by Infineon Technologies ; NFmin = 0.65 dB at 5.5 GHz; 1.1 dB at 12 GHz, 1.8 V, 5 mA ; OIP3 = 18 dBm at 5.5 GHz, 1.8 V, 10 mA ; Ideal for ...
BFR840L3RHESD SiGe:C Ultra Low Noise RF Transistor for 2.4 - 5.8 GHz WLAN LNA Application. Reference Design using part BFR840L3RH by Infineon Technologies ...
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The BFR840L3RHESD from Infineon is a discrete RF heterojunction bipolar transistor (HBT) with integrated ESD protection suitable for applications in the 5 ...
Part #: BFR840L3RHESD. Download. File Size: 1MbKbytes. Page: 28 Pages. Description: Robust Low Noise Silicon Germanium Bipolar RF Transistor.
Aug 14, 2012 · Device Overview: BFR840L3RHESD. Infineon Technologies‟ BFR840L3RHESD is a high gain, ultra low noise Silicon-Germanium-. Carbon (SiGe:C) HBT ...
BFR840L3RHESD Series NPN 2.6 V 35 mA 75 mW SMT RF Bipolar Transistor - PG ... The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) ...