BFP740FESD · Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection ...
Sep 26, 2018 · The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list. •. Unique ...
Jul 2, 2010 · The BFP740FESD is a high gain, ultra low noise Silicon-Germanium ... BFP740FESD 5 - 6 GHz LNA, Fast Switching / Fast Turn ON Turn OFF time.
The BFP740FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon's reliable high volume silicon germanium carbon (SiGe:C) ...
Part #, BFP740FESD. Download, BFP740FESD Click to download. File Size, 1641.0 Kbytes. Page, 28 Pages. Manufacturer, INFINEON [Infineon Technologies AG].
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2.3 to 2.7GHz WIFI/WIMAX Application Circuit Using BFP740FESD
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2.3 to 2.7GHz WIFI/WIMAX Application Circuit Using BFP740FESD · Reference Design using part BFP740FESD by Infineon Technologies AG · For End Products · Description.
BFP740FESD Datasheet, Equivalent, Cross Reference Search. Type Designator: BFP740FESD SMD Transistor Code: T7* Material of Transistor: SiGe. Polarity: NPN
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BFP740FESD ; Manufacturer Part Number: BFP740FESD ; Brand: Infineon Technologies AG ; DateCode: 11+ ; Package / Case: TSFP-4 ; Category: Integrated Circuits (ICs).