Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV HBM ESD hardness. High transition frequency fT = 45 ...
Sep 26, 2018 · Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,. 2 kV HBM ESD hardness.
Part #: BFP720FESD. Download. File Size: 1MbKbytes. Page: 29 Pages. Description: Robust High Performance Low Noise Bipolar RF Transistor.
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Mounting Type. Surface Mount ; Package / Case. 4-SMD, Flat Leads ; Supplier Device Package. 4-TSFP ; Base Product Number. BFP720 ; Link. Datasheets, BFP720FESD.
BFP720FESD Datasheet, Equivalent, Cross Reference Search. Type Designator: BFP720FESD SMD Transistor Code: T3* Material of Transistor: SiGe. Polarity: NPN
Part Number, BFP720FESD. Manufacturer, Infineon. Description, Robust Low Noise Silicon Germanium Bipolar RF Transistor. Published, Mar 18, 2016.
The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with ...
Jan 4, 2024 · I'm trying to get IV curves of the BFP720FESD NPN bipolar junction transistor using a PXIe-4162 SMU. I do a sweep of 0-3V on the collector ...
Apr 16, 2022 · I was thinking something like BFP720FESD or BFP840FESD differential pair with couple hundred Ohm emitter resistors, 1k collector resistors ...