Smallest Package 1.4 x 0.8 x 0.59 mm; Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz; Transition frequency fT = 25 GHz ...
Jan 25, 2019 · BFP405F. Low profile wideband silicon NPN RF bipolar transistor. Product description. The BFP405F is a low noise device based on a grounded ...
BFP 405F E6327 ; Part Status. Obsolete ; Transistor Type. NPN ; Voltage - Collector Emitter Breakdown (Max). 5V ; Frequency - Transition. 25GHz ; Noise Figure (dB ...
For oscillators up to 12 GHz; Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz; SIEGET® 25 GHz fT - Line; Pb-free (RoHS compliant) ...
$0.45
Specifications ; Technology: Si ; Transistor Polarity: NPN ; Collector- Emitter Voltage VCEO Max: 4.5 V ; Emitter- Base Voltage VEBO: 1.5 V.
Low Noise Silicon Bipolar RF Transistor. • For low current applications • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz
Apr 20, 2007 · For low current applications. • Smallest Package 1.4 x 0.8 x 0.59 mm. • Noise figure F = 1.25 dB at 1.8 GHz.
BFP405 Infineon Technologies Transistors parts available at DigiKey ... BFP405. Infineon Technologies. Discrete Semiconductor Products | Bipolar RF Transistors ...
€1.00
BFP405 Siemens Silicon bipolar NPN RF transistor, SOT-343 Polarity: NPN, Collector-emitter voltage (Vce max): 4.5 V, Transition frequency (f T ): 25 GHz, ...
3 - 4GHz UWB Low Noise Amplifier Using the BFP405F consumes only 2mA from a 1.5V Power Supply. Reference Design using part BFP405F by Infineon Technologies AG.