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THERMAL CHARACTERISTICS. Characteristic. Symbol. Max. Unit. Thermal Resistance, Junction-to-Case. RθJC. 1.0. °C/W. Stresses exceeding Maximum Ratings may ...
BDV64 Bourns Darlington Transistors 125W 12A PNP datasheet, inventory, & pricing.
BDV64 from www.digikey.com.mx
MX$2.84
Order today, ships today. BDV64 – Bipolar (BJT) Transistor PNP 60 V 12 A 60MHz 125 W Through Hole TO-218 from NTE Electronics, Inc. Pricing and Availability ...
In stock
Buy the NTE BDV64 at www.Arcade-Electronics.com. We have a wide selection of NTE Electronics Parts in stock ready to ship. Shop for more NTE Components ...
The BDV64 (PNP) and BDV65 (NPN) are silicon Darlington complementary power transistors in a. TO-3PN type package designed for general purpose amplifier and low ...
In stock
Order today, ships today. BDV64 – Bipolar (BJT) Transistor PNP 60 V 12 A 60MHz 125 W Through Hole TO-218 from NTE Electronics, Inc. Pricing and Availability ...
Size:279K inchange semiconductor bdv64 a b c.pdf · BDV64. INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ...
Emitter-base voltage. VEBO. -5. V. Continuous collector current. IC. -12. A. Peak collector current (see Note 1).
P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.