BAT24-02LS · Low inductance LS = 0.2 nH (typical) · Low capacitance C = 0.2 pF (typical) at 1 MHz · TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 ...
Sep 7, 2018 · This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection.
BAT 24-02LS E6327 Infineon Technologies - Mouser Electronics
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BAT 24-02LS E6327 Infineon Technologies Schottky Diodes & Rectifiers Silicon Schottky Diodes 4V 110mA datasheet, inventory, & pricing.
€1.16
Order today, ships today. BAT2402LSE6327XTSA1 – RF Diode Schottky - Single 4V 110 mA 100 mW PG-TSSLP-2-1 from Infineon Technologies.
Jun 15, 2011 · Silicon Schottky Diode. • RF Schottky diode for mixer applications up to 26 GHz. • Extremely low inductance combined with.
BAT2402LSE6327XTSA1 ; Package / Case. 0201 (0603 Metric) ; Supplier Device Package. PG-TSSLP-2-1 ; Base Product Number. BAT2402 ; Link. Datasheets, BAT 24-02LS.
Silicon Schottky Diode. • RF Schottky diode for mixer applications up to 26 GHz • Extremely low inductance combined with ultra low device capacitance
Part #: BAT24-02LS-E6327 ; Manufacturer: Infineon Technologies AG ; Description: Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.11A, 4V V(RRM) ; Diode Type ...
BAT24 Datasheet. Part #: BAT24-02ELS. Datasheet: 349Kb/11P. Manufacturer: Infineon Technologies AG. Description: Single silicon Schottky diode. 10 Results.
BAT 24-02LS E6327 - Blank PCBs are manufactured by Infineon. HQonline offers the price, inventory, datasheet of BAT 24-02LS E6327.