2SC5198. 2013-11-01. 1. TOSHIBA Transistor Silicon NPN Triple Diffused Type. 2SC5198. Power Amplifier Applications. • High breakdown voltage: VCEO = 140 V ( ...
2SC5198-O(S1,E Toshiba Semiconductor and Storage - DigiKey
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Order today, ships today. 2SC5198-O(S1,E – Bipolar (BJT) Transistor NPN 140 V 10 A 30MHz 100 W Through Hole TO-3P(N) from Toshiba Semiconductor and Storage.
Bipolar Transistors, NPN Bipolar Transistor, 140 V, 10 A, TO-3P(N)｜Find data sheet and product information.
Size:148K toshiba 2sc5198.pdf. 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown ...
2SC5198. DESCRIPTION. ·Low Collector Saturation Voltage-. : VCE(sat)= 2.0V(Min) @IC= 7A. ·Good Linearity of hFE. ·Complement to Type 2SA1941. APPLICATIONS.
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10PCS 5pairs 2SC5198 2SA1941 TO3P (5PCS A1941 + 5PCS C5198) TO-3P Transistor Original Authentic: Amazon.com: Industrial & Scientific.
Part #: 2SC5198. Download. File Size: 122Kbytes. Page: 4 Pages. Description: Silicon NPN Triple Diffused Type Power Amplifier Applications.
1pair 2SA1941 & 2SC5198 A1941+C5198 Toshiba Transistor ...
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Material of Transistor: Si. 2SC1941 & 2SA5198 Polarity: PNP & NPN Maximum Collector Power Dissipation (Pc): 100 W Maximum Collector-Base Voltage |Vcb|: 140 ...
Bridgold 10pcs(5pcs 2SC5198+5pcs 2SA1941) C5198 A1941 Power ...
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2SA1941, 2SC5198 complementary; Suitable for use in 70-W high fidelity audio amplifier's output stage; Collector current reaches 10A; NOTE:Exposure to absolute ...