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VEBO. Emitter-Base Voltage. 6. V. IC. Collector Current. 500. mA. PC. Collector Power Dissipation. 625. mW. TJ. Junction Temperature.
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Order today, ships today. 2N6517 – Bipolar (BJT) Transistor NPN 350 V 500 mA 200MHz 625 mW Through Hole TO-92 (TO-226) from onsemi.
Bipolar junction transistor featuring high current, low saturation voltage and high-speed switching. Learn More.
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2N6517 PBFREE Central Semiconductor Bipolar Transistors - BJT . . datasheet, inventory, & pricing.
Thermal Resistance, Junction−to−Case. RθJC. 83.3. °C/W. Stresses exceeding Maximum Ratings may damage the device. Maximum. Ratings are stress ratings only ...
Features. Collector-Emitter Volt (Vceo): 350V; Collector-Base Volt (Vcbo): 350V; Collector Current (Ic): 0.5A; hfe: 30-200 @ 30mA; Power Dissipation (Ptot): ...
The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.
2N6517 Transistor Datasheet pdf, 2N6517 Equivalent. Parameters and Characteristics.
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