2N3055
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. Its numbering... Wikipedia
MAXIMUM RATINGS. Rating. Symbol. Value. Unit. Collector−Emitter Voltage. VCEO. 60. Vdc. Collector−Emitter Voltage. VCER. 70. Vdc. Collector−Base Voltage.
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2N3055, MJ2955. Electrical characteristics. 7. 2. Electrical characteristics. (Tcase = 25°C; unless otherwise specified). Note: For PNP type voltage and current ...
COMPLEMENTARY. SILICON POWER TRANSISTORS. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and. MJ2955 are complementary silicon power transistors manufactured by ...
The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are ...
The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = ...