SKM200GB126D Power IGBT Transistor from Semikron Configuration Half Bridge; Voltage V 1200; Current A 260; datasheet, pricing & availability.
SKM200GB126D. © by SEMIKRON. Rev. 1.0 – 20.07.2015. 1. SEMITRANS® 3. GB. Trench IGBT Modules. SKM200GB126D. Features. Trench = Trenchgate technology. VCE(sat) ...
25°C, unless otherwise specified. Symbol Conditions min. typ. max. Units. IGBT. VGE(th). VGE = VCE, IC = 6 mA. 5. 5,8. 6,5. V. ICES. VGE = 0 V, VCE = VCES.
$271.79
Nov 28, 2023 · SEMIKRON SKM 200GB 126 D IGBT Array & Module Transistor, N Channel, 260A, 2.15V, 220W, 1.2kV, SEMITRANS 3. Datasheet PDF Search.
SKM200GB126D 22890631SEMIKRON DANFOSS ; Type of module. IGBT ; Semiconductor structure. transistor/transistor ; Topology. IGBT half-bridge ; Max. off-state voltage.