Ideal for switching applications and boasts a die-on resistance of approximately 1mΩ. Learn More. No ...
Jul 16, 2001 · Drain-Source Breakdown Voltage. V(BR)DSS. VGS = 0 V, ID = 10 μA. 70. 60. 60. VDS = VGS, ID = 1 mA. 2.1. 0.8. 3. V. Gate-Threshold Voltage.
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Parameter Symbol 2N7000 2N7002 VQ1000J VQ1000P VQ1000J/P BS170 Unit. Drain-Source Voltage VDS 60 60 60 60 60. Gate-Source Voltage—Non-Repetitive VGSM "40 "40 ...
FEATURES ○ Low On-Resistance: 2.5 Ω ○ Low Threshold: 2.1 V ○ Low Input Capacitance: 22 pF ○ Fast Switching Speed: 7 ns ○ Low Input and Output Leakage.
Jul 16, 2001 · SPECIFICATIONS VQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED). Limits. VQ1000J/P. BS170. Parameter. Symbol. Test Conditions. Typa. Min.
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VQ1000J Semiconductors from VISHAY In Stock, Order Now! 2-Year Warranty - , POWER FIELD-EFFECT TRANSISTOR, 0.225A I(D), 60V, 5.5OHM, 4-ELEMENT, N-CHANNEL, ...
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1x VQ1000J N-Channel 60-V (D-S) MOSFET ; Brand. Unbranded/Generic ; MPN. VQ1000J ; Accurate description. 5.0 ; Reasonable shipping cost. 4.8 ; Shipping speed. 5.0.
VQ1000J Transistor Quad MOSFET . Features. Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input ...
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SILICONI VQ1000J DIP-14 N-Channel 60-V (D-S) MOSFET ; Condition. New ; Quantity. More than 10 available ; Item Number. 203303532962 ; UPC. Does not apply ; Brand.
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VQ1000J is a DIP-14 integrated circuit (IC) manufactured by NEC. It is a voltage-controlled oscillator (VCO) IC with a frequency range of 10 to 1000 MHz.