SW Low drain-source ON-resistance: R = 3.1 m (typ. 8.8. Size:217K toshiba tpc8035-h.
TPC8031-H(TE12LQM) Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 30V ; Current ...
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TPC8031-H(TE12LQM) 8-SOP (5.5x6.0) MOSFET N-CH 30V 11A SOP8 2-6J1B ; Current - Continuous Drain (Id) @ 25 C · 11A ; Rds On (Max) @ Id Vgs, 13.3 mOhm @ 5.5A 10V.
TPC8031-H MOSFET Transistor Specification & Datasheet - UXPython
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The TPC8031-H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This ...
Toshiba Semiconductor and Storage TPC8031-H(TE12LQM) ; Drain to Source Voltage (Vdss), 30 V ; Current - Continuous Drain (Id) @ 25°C · 11A (Ta) ; Rds On (Max) @ Id, ...