Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at. 350°C. Page 3. MICROWAVE POWER GaAs FET. TIM7785 ...
Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property ...
TIM7785-4UL Toshiba RF JFET Transistors datasheets, pricing, and inventory.
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1PC For TOSHIBA TIM7785-4UL MOSFET Power Transistor ; Quantity. 10 available ; Item Number. 283325846148 ; Brand. TOSHIBA ; MPN. TIM7785-4UL ; Accurate description.
TOSHIBA-TIM7785-4UL Datasheet 72Kb / 4P, MICROWAVE POWER GaAs FET. TIM7785-4UL · TOSHIBA-TIM7785-4UL_09 Datasheet 144Kb / 4P, HIGH POWER P1dB=36.5dBm at 7.7GHz ...
TIM7785-4UL. TECHNICAL DATA. FEATURES. ▫ HIGH POWER. ▫ BROAD BAND INTERNALLY MATCHED FET. P1dB=36.5dBm at 7.7GHz to 8.5GHz. ▫ HIGH GAIN. ▫ HERMETICALLY ...
$148.00
NEW ORIGINAL MANUFACTURER RF POWER MODULE TIM7785-4UL SHED CMN ; Quantity. 6 available ; Item Number. 202956869607 ; Country/Region of Manufacture. Germany ; MPN.
€57.37
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TIM7785-4 Microwave Power GAAS Fet. ... TIM7785-4UL Frequency Band (GHz) = 7.7-8.5 ;; P1dB (dBm) = 36.5 ;; G1dB (dB) ...
Part #: TIM7785-6UL_09. Download. File Size: 144Kbytes. Page: 4 Pages. Description: HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz.