TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual ...
Part #: TIM6472-45SL. Download. File Size: 492Kbytes. Page: 4 Pages. Description: MICROWAVE POWER GaAs FET. Manufacturer: Toshiba Semiconductor.
TIM6472-45SL ; Manufacturer, Toshiba ; Transistor Type, HFET ; Technology, GaAs ; Vds - Drain-Source Breakdown Voltage, 15 V ; Vgs - Gate-Source Breakdown Voltage, - ...
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 46.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN G1dB= 8.0dB at 6.4G...
TIM6472-35SL(PDF)(341.2KB), 6.4-7.2, 10, 8.0, 45.5, 8.0, 8.0, 37, -42, 35.0, 1.0, 2-16G1B, Download · TIM6472-45SL(PDF)(430.3KB), 6.4-7.2, 10, 9.0, 46.5, 8.0 ...
n LOW INTERMODULATION DISTORTION n HIGH GAIN. IM3=-45 dBc at Pout= 35.5dBm. G1dB=8.0dB at 6.4GHz to 7.2GHz. Single Carrier Level.
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Quick Details ; Payment Terms: T/T,Western Union,,paypal ; Supply Ability: 1200 pieces per Week ; Brand Name: originalimport ; Operating Temperature: standard.
Part No. TIM6472-45SL ; Description, MICROWAVE POWER GaAs FET ; File Size, 506.76K / 4 Page ; Maker, TOSHIBA[Toshiba Semiconductor]. JITONG TECHNOLOGY (CHINA HK & ...
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