Specifications ; Vds - Drain-Source Breakdown Voltage: 900 V ; Id - Continuous Drain Current: 8 A ; Rds On - Drain-Source Resistance: 1.45 Ohms ; Vgs - Gate-Source ...
STW8NB90 Product details. DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs ...
STW8NB90. 900 V. < 1.45 Ω. 8 A. 1/5. Page 2. THERMAL DATA. Rthj-case. Rthj-amb. Rthc-sink. Tl. Thermal Resistance Junction-case. Max. Thermal Resistance ...
STW8NB90 - STH8NB90FI. 2/9. THERMAL DATA. AVALANCHE CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED). OFF. ON (1). DYNAMIC.
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STW8NB90 N-channel 900V - 1.1 Ohm - 8A - TO-247/ISOWATT218 Powermesh MOSFET . TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ...
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10pcs/lot Original STW8NB90 MOSFET 8A 900V TO-247 High power large chip Transistor W8NB90 Quality assurance. Delivery. Shipping: US $2.92.
$359.43
Phoenix Contact STW8NB90 is CABLE 3COND 22AWG YELLOW 100M. Star River Electronics services the golbal buyers with Fast deliver & Higher quality components!
£19.99
STW8NB90 Transistor N Channel MOSFET - CASE: TO218 MAKE: STMicroelectronics. Price: £19.99. + VAT 20% for UK purchases.