Symbol. Parameter. Value. Unit. STP5NA50. STP5NA50FI. VDS. Drain-source Voltage (VGS = 0). 500. V. VDG R. Drain-gate Voltage (RGS = 20 kΩ).

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and ...

STP5NA50FI MOSFET. Datasheet pdf. Equivalent. Type Designator: STP5NA50FI Type of Transistor: MOSFET Type of Control Channel: N -Channel

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR · STP5NA50FI datasheet pdf SGS Thomson Microelectronics Download STP5NA50FI datasheet from

Details, datasheet, quote on part number: STP5NA50FI ; Title, Medium Voltage ; Description, Old PRODUCT: Not Suitable For Design-in ; Company, ST Microelectronics, ...

STP5NA50FI · STMICROELECTRONICS-STP5NA50FI Datasheet 202Kb/10P, N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR. STP5NA60 · STMICROELECTRONICS-STP5NA60 ...

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ ...

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Part No. STP5NA50 STP5NA50FI 3064. Description, N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system ...

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge t...