ECOPACK is an ST trademark. Page 12. Package mechanical data. STGW20NC60VD. 12/14. Doc ID 9983 Rev 5. Dim. mm. Min. Typ. Max. A. 4.85. 5.15. A1. 2.20. 2.60 b.
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STGW20NC60VD ; Input Type. Standard ; Gate Charge. 100 nC ; Td (on/off) @ 25°C · 31ns/100ns ; Test Condition. 390V, 20A, 3.3Ohm, 15V ; Reverse Recovery Time (trr). 44 ...
$2.83
FEATURED PRODUCTS. STMICROELECTRONICS ... Designed with an advanced trench gate field-stop structure. ... Features two IGBTs and diodes in a compact, rugged, ...
This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
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The STGW20NC60VD is a 600V very fast IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and ...
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STGW20NC60VD STMicroelectronics IGBT Transistors N-Ch 600 Volt 30 Amp datasheet, inventory & pricing.
STGW20NC60VD STMicroelectronics | C10646 - LCSC Electronics
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$3,357.00
STGW20NC60VD STMicroelectronics $3.357 - 200W 60A 600V TO-247AC-3 IGBTs ROHS datasheet, price, inventory C10646.
$930.00
The STGW20NC60VD is a N-channel very fast Insulated Gate Bipolar Transistor with Ultrafast diode. It utilizes the advanced Power MESH process resulting in an ...
STGW20NC60VD. 600 V. < 2.5 V. 30 A. 1. 2. 3. TO-247. Weight: 4.41gr ± 0.01. Max Clip Pressure: 150 N/mm. 2. SALES TYPE. MARKING. PACKAGE. PACKAGING.
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