STE53NA50. N - CHANNEL ENHANCEMENT MODE. FAST POWER MOS TRANSISTOR. TYPE. STE53NA50. VDSS. 500 V. RoS(on) ! < 0.085 Si. ID. 53 A. TYPICAL RDs<on)= 0.075 ii.
STE53NA50. 500 V. < 0.085 Ω. 53 A. ISOTOP. 1/7. Page 2. THERMAL DATA. Rthj-case. Rthc-h. Thermal Resistance Junction-case. Max. Thermal Resistance Case-heatsink ...
Symbol. Parameter. Value. Unit. VDS. Drain-source Voltage (VGS = 0). 500. V. VDGR. Drain- gate Voltage (RGS = 20 kΩ). 500. V. VGS. Gate-source Voltage.
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