Specifications ; Rise Time: 8 ns ; Factory Pack Quantity: Factory Pack Quantity: 3000 ; Subcategory: MOSFETs ; Transistor Type: 1 N-Channel.
STD3NB50 Product details ... Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding ...
STD3NB50-1 N-channel Enhancement Mode Powermesh MOSFET . TYPICAL RDS(on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC ...
STD3NB50, Medium Voltage. N-channel Enhancement Mode Powermesh MOSFET Category: Discrete - Transistors, ST Microelectronics, Inc. STD3NB50-1, -, ST ...
s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.5000 ohms ; Package Type: TO-3, TO-39, HERMETIC SEALED, MODIFIED ...
DESCRIPTION. Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with.
$0.66 In stock
Original STD3NB50 SMD TO-252 Field Effect Tube D3NB50 D3N850. 1/1. 0. US $0.66. Price shown before tax. Original STD3NB50 SMD TO-252 Field Effect Tube D3NB50 ...
Global distributor of + STD3NB50-1 + , Stock: Yes, shipping: Can Ship Immediately. OMO Electronic, Your trustworthy partner.
STD3NB50-1 (STMicroelectronics). Electronic component documentation (datasheet) «STD3NB50-1» (Power MOSFETs), manufacturer STMicroelectronics. Download ...
std3nb50-1.pdf · STD3NA50-1. STD3NB50STD3NB50-1N - CHANNEL 500V - 2.5 - 3A - IPAK/DPAKPowerMESH MOSFETPRELIMINARY DATATable 1. General Features Figure 1.