This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate ...
Order today, ships today. STB11NM60N-1 – N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK from STMicroelectronics. Pricing and Availability on millions ...
STB11NM60N-1 - N-channel 600 V, 0.37 Ω, 10 A MDmesh͐2;2; II Power MOSFET TO-220, TO-220FP, I²PAK, IPAK, DPAK, D²PAK, , STMicroelectronics.
High voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. Learn More.
Missing: STB11NM60N- | Show results with:STB11NM60N-
STB11NM60-1 ; Input Capacitance (Ciss) (Max) @ Vds. 1000 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 160W (Tc) ; Operating Temperature. -65°C ~ 150°C (TJ).
Missing: STB11NM60N- | Show results with:STB11NM60N-
This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate ...
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N. Electrical ratings. 3/18. 1. Electrical ratings. Table 2. Absolute maximum ratings. Symbol. Parameter.
Transistor Type: Power MOSFET; Voltage Vds Typ: 600 V; Voltage Vgs Rds on Measurement: 10 V. RoHS: Yes. Other Names: STB11NM60N1, STB11NM60N 1.
STB11NM60N-1, STMicroelectronics, MOSFET N-CH 600V 10A I2PAK ; I2PAK. Transistors - FETs, MOSFETs - Single.
Nov 30, 2023 · STB11NM60N-1 ST Microelectronics datasheet PDF, 20 pages, view STB11NM60N-1 Specifications online, IPAK N-CH 600V 10A.