Specifications ; Vds - Drain-Source Breakdown Voltage: 30 V ; Id - Continuous Drain Current: 100 mA ; Rds On - Drain-Source Resistance: 12 Ohms ; Vgs - Gate-Source ...
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Order today, ships today. SSM6P15FU,LF – Mosfet Array 30V 100mA 200mW (Ta) Surface Mount US6 from Toshiba Semiconductor and Storage.
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-363(US6)｜Find data sheet and product information.
Mar 1, 2014 · Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in.
Part #: SSM6P15FU. Download. File Size: 182Kbytes. Page: 5 Pages. Description: High Speed Switching Applications. Manufacturer: Toshiba Semiconductor.
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Unit Price: $0.323 · Type. Parameter · Base Product Number. SSM6P15 · Current - Continuous Drain (Id) @ 25°C 100mA · Drain to Source Voltage (Vdss). 30V · FET ...
SSM6P15FU,LF. MOSFET 2P-CH 30V 0.1A US6. MOSFET 2P-CH 30V 0.1A US6. 32,005. Tape & Reel (TR). Cut Tape (CT). Digi-Reel®. -. View Details · SOT-563. SSM6P15FE( ...
Dual P-Channel MOSFET, 100 A, 30 V, 6-Pin US6 Toshiba SSM6P15FU(TE85L,F) ; Channel Type, P ; Maximum Continuous Drain Current, 100 A ; Maximum Drain Source Voltage ...
SSM6P15FU MOSFET. Datasheet pdf. Equivalent. Type Designator: SSM6P15FU Marking Code: DQ Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum ...
