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Order today, ships today. SSM6N35FE,LM – Mosfet Array 20V 180mA 150mW Surface Mount ES6 from Toshiba Semiconductor and Storage. Pricing and Availability on ...
These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The π-MOS VI MOSFETs drive a 2.5V minimum to 20V ...
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.18 A, 3.0 Ω@4V, SOT-563(ES6)｜Find data sheet and product information.
Mar 1, 2014 · Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the. SSM6N35FE). Then, for ...
High-Speed Switching Applications ○ Analog Switch Applications. • 1.2-V drive • N-ch 2-in-1 • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V)
The SSM6N35FE from Toshiba is a MOSFET with Continous Drain Current 0.18 A, Drain Source Resistance 1500 to 20000 Milliohm, Drain Source Breakdown Voltage ...
SSM6N35FE Small-signal MOSFET 2 in 1. LTspice(Note) : ; Polarity : N-ch x 2 ; VDSS(V) : 20 ; VGSS(V) : +/-10 ; ID(A) : 0.18 ; PD(W) : 0.15 ; Ciss(pF) : 9.5 ...
Nov 28, 2023 · SSM6N35FE,LM Toshiba datasheet PDF, 6 pages, view SSM6N35FE,LM User Reference Manual Guide & Specifications online, ES N-CH 20V 0.18A.
Toshiba Electronic Devices & Storage Corp. SSM6N35FE,LXGM
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N-ch x 2 MOSFET, 20 V, 0.18 A, 3.0 Ω@4V, SOT-563(ES6). Built by Ultra Librarian. Built & Verified by Ultra Librarian. Learn more about our process here.
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Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 Toshiba SSM6N35FE ; RS Stock No.: 171-2510P ; Brand: Toshiba ; Manufacturers Part No.: SSM6N35FE.