SSM6J205FE. Fabricante: Toshiba. Toshiba. Ref. Cliente: Descripción: MOSFET Vds=-20V Id=-800mA 6Pin. Hoja de datos: SSM6J205FE Hoja de datos (PDF). Modelo ...
Specifications ; Vds - Drain-Source Breakdown Voltage: 20 V ; Id - Continuous Drain Current: 80 mA ; Rds On - Drain-Source Resistance: 234 mOhms ; Vgs - Gate-Source ...
SSM6J205FE MOSFET. Datasheet pdf. Equivalent. Type Designator: SSM6J205FE Marking Code: KO Type of Transistor: MOSFET Type of Control Channel: P -Channel
SSM6J205FE. 2007-11-01. 1. TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type. SSM6J205FE. High-Speed Switching Applications. Power Management Switch ...
SSM6J205FE Toshiba are new and original and in stock for sale with 180 days warranty! view product specifications of Integrated Circuits (ICs) and datasheet ...
SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications ...
Product, VB Package, VDS(V), VGS, Vthyp（V）, ID(A), Technology. SSM6J205FE, SC75-6, -30V, 20（±V）, -1.7V, -2.4A. Similar type recommendation.
SSM6J205FE MOSFET P-Channel -20V -0.8A 460mohm SOT-563 marking KO high-speed switch power management 1.8V drive low on-resistance. Inventory:0 Min Order：10.
SSM6J205FE ; Gate Source Breakdown Voltage; +/- 8 V ; Continuous Drain Current; 0.8 A ; Configuration; Single ; Maximum Operating Temperature; + 150 C ; Mounting ...
SSM6J205FE KO 的参数. 最大源漏极电压Vds Drain-Source Voltage, -20V. 最大栅源极电压Vgs(±) Gate-Source Voltage, 8V. 最大漏极电流Id Drain Current, -800mA/-0.8A.