SPP80N06S2L-07 Infineon Technologies - DigiKey Österreich
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SPP80N06S2L-07 ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 55 V ; Current - Continuous Drain (Id) @ 25°C · 80A (Tc) ; Drive Voltage (Max Rds ...
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Order today, ships today. SPP80N06S2-07 – N-Channel 55 V 80A (Tc) 250W (Tc) Through Hole PG-TO220-3-1 from Infineon Technologies.
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May 12, 2000 · Thermal Characteristics. Parameter. Symbol. Values. Unit min. typ. max. Characteristics. Thermal resistance, junction - case.
Part #: SPP80N06S2L-07. Download. File Size: 308Kbytes. Page: 8 Pages. Description: OptiMOS Power-Transistor. Manufacturer: Infineon Technologies AG.
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Infineon SPP80N06S2L-07 ; Vds - Drain-Source Breakdown Voltage, 55 V ; Id - Continuous Drain Current, 80 A ; Rds On - Drain-Source Resistance, 7 mOhms ; Vgs - Gate- ...
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5PCS 2N06L07 SPP80N06S2L-07 TO220 ; Returns. Eligible for Return, Refund or Replacement within 30 days of receipt ; Manufacturer, FENXINCHIP ; ASIN, B0CRKR87WX.
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SPP80N06S2L-07 ; Current - Continuous Drain (Id) @ 25°C : 80A (Tc) ; Drain to Source Voltage (Vdss) : 55V ; Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V ; FET ...
PDF Datasheet Preview. Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated
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Features · Our company mainly focuses on spot goods, with a large amount of inventory in stock. · The main business products include: field-effect transistors, ...
This device utilizes emitter ballasting for improved ruggedness and reliability. Collector-base Voltage Collector-emitter Voltage Emitter-Base Voltage Device ...