SP(I,B,P)73N03S2L-08 Datasheet by Infineon Technologies ; OptiMOS Power-Transistor ; VDS 30 V ; RDS(on) 8.4 mΩ ; Excellent Gate Charge x · (on) ; dv/dt rated.
Part #: SPB73N03S2L-08. Download. File Size: 415Kbytes. Page: 8 Pages. Description: OptiMOS Power-Transistor. Manufacturer: Infineon Technologies AG.
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 8.1mOhm, 73A, LL Others with the same file for datasheet: SPP73N03S2L-08 · SPB73N03S2L-08 ...
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SPB73N03S2L-08 P-TO263-3 MOSFET N-CH 30V 73A D2PAK ; Vgs(th) (Max) @ Id, 2V @ 55?A ; Gate Charge (Qg) @ Vgs, 46.2nC @ 10V ; Input Capacitance (Ciss) @ Vds, 1710pF ...
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Model Number: SPB73N03S2L-08 ; Size / Dimension: standard ; Current - Supply: standard ; Mounting Type: standard ; Voltage - Breakdown: standard.
PDF Datasheet Preview. Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS on product FOM
SPB73N03S2L-08 - Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 8.4mOhm, 73A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon ...
1Current limited by bondwire ; with an RthJC = 1.4K/W the chip is able to carry ID= 87A at 25°C, for detailed information see app.
SPB73N03S2L-08 ; Input Capacitance (Ciss) (Max) @ Vds : 1710pF @ 25V ; Mounting Type : Surface Mount ; Operating Temperature : -55°C ~ 175°C (TJ) ; Package / Case : ...
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